NovelPanda
Junior Member level 3
Dear all:
I want to put NT_N layer between two blocks to isolate their mutual noise coupling. NT_N is an layer in which neither N or P will be doped: it is an intrinsic silicon region with high resistivity. However, if NT_N is too closed to MOS transistor, would the MOS be malfunction or affected? Assume that the MOS has been enclosed by p-substrate ring or deep N-well (triple well).
Thanks in advanced!
I want to put NT_N layer between two blocks to isolate their mutual noise coupling. NT_N is an layer in which neither N or P will be doped: it is an intrinsic silicon region with high resistivity. However, if NT_N is too closed to MOS transistor, would the MOS be malfunction or affected? Assume that the MOS has been enclosed by p-substrate ring or deep N-well (triple well).
Thanks in advanced!