wizardyhnr
Junior Member level 3
Recently I am design a LNA of three stages with a SiGe BiCMOS process. I want a output 1dB compression point of 10dBm or higher for the third stage of the LNA. I have set the collect current Ic 12mA, yet I have gain a 1dB compression point of 8.5dBm, which is lower than the figure of merit.
Do someone have any advice on how to improve the 1dB compression point of this LNA?
Do someone have any advice on how to improve the 1dB compression point of this LNA?