circuitking
Full Member level 5
Hi, I was reading the paper "OPTIMUM DESIGN OF DISTRIBUTED POWER-FET AMPLIFIERS. APPLICATION TO A 2 - 18 GHz MMIC MODULE EXHIBITING IMPROVED POWER PERFORMANCES " and came across this
"As confirmed by experimental results on commercially available power FETs, the optimum output admittance of the FET is equivalent to a constant conductance Gopt in parallel with a constant capacitance Copt, over very wide bandwidths". Is it really possible for MOSFET and what exactly should I do to find the particular optimum impedance? Because loadpull would give different optimum impedances at different frequencies.
"As confirmed by experimental results on commercially available power FETs, the optimum output admittance of the FET is equivalent to a constant conductance Gopt in parallel with a constant capacitance Copt, over very wide bandwidths". Is it really possible for MOSFET and what exactly should I do to find the particular optimum impedance? Because loadpull would give different optimum impedances at different frequencies.