ANALA
Member level 1
Variability at 32nm node in subthreshold regime
Greetings,
Can threshold voltage and gate length be varied concurrently ?Is it possible to consider simultaneous 3 sigma variations for both these parameters during modeling? Or these two parameters correlated (correlation coefficient must be considered)?
Greetings,
Can threshold voltage and gate length be varied concurrently ?Is it possible to consider simultaneous 3 sigma variations for both these parameters during modeling? Or these two parameters correlated (correlation coefficient must be considered)?