What is inductive peaking

Hi all,
I am designing a clock regeneration circuit for my master thesis. I have designed the circuit using resistors, however I need to use inductive peaking for some purpose. I am new to this technique. Can anyone please explain this technique. Help is appreciated.

An LC tank can provide higher than incoming amplitude
and therefore sharper than incoming edges, and suppress
some time-domain input jitter (while fast edges help with
front end contributed jitter). Provided that the incoming
clock is continuous, or the data stream used to regenerate
the clock has sufficient transition density and symmetry.
Burst-mode, you'd need a decently long preamble to ring
up the tank to "steady state" frequency / phase / amplitude.

Hello,
Now I am using rppd resistors in place of ideal resistors in my circuit design. When I check the properties of this rppd resistor, I could see Imax being calculated by changing the values of resistance and width of the rppd resistors. I don't know how it is done. Could anyone help me to solve this issue. Help is appreciated.

Thanks

Imax constraint would be set by the lesser of two
things - current density (electromigration), either
in the resistor film (rppd = poly?) or its contacts -
both roughly tracking width alone - and power
density (W/area) which responds to W and to R
as both proxy for L, given W, and as a term in the
power calculation (I^2*R) and thus power density
(I^2*R/(W^2*R/(sheetRho)). Power density is more
a short term reliability limit (resistor fusing or, short
of this, value drift) while current density is a long
term reliability concern (short-term EM damage is
going to take mucho current density). The use-model
is important to current density (DC vs time-averaged
unidirectional current pulse vs AC reversing current)
and to power density (short pulse adiabatic vs long
pulse or continuous where thermal energy can exit
the film, to some extent).

A bulk silicon resistor in substrate will handle way more
power density than a thin film resistor on top of field
oxide. At the cost of extra capacitance and parasitic
diodes' "behaviors".