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silicide and N-well contact

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moisten

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n-well contact

Hi, I try to use silicide and N-well to form Schottky diode. While laying out in IBM CMRF8SF, I used three layers: n-well, square stud contact(to connect active area or polysilicon line to metal 1) and metal 1. (Certainly there's a DRC error which needs to be explained to foundry). Will silicide and N-well contact be created in this way? If no, I can use n-well, active region, square stud contact and metal 1 to create the Schottky contact. But How to block the source&drain ion implantation?

Thanks a lot.
 

silicide block

moisten said:
How to block the source&drain ion implantation?
Click to expand...
Just don't put p+ (nor n+) beneath your Schottky contact(s), i.e. active area only, and probably you'll need the SAB layer in order to block the salicide beneath the Schottky contacts. Surely you'll get DRC errors. For the n-well contacts, use standard n+ well taps.
 

    M

    moisten

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nwell contact without implant

Is this ever done before, or is it an experiment?
 

    M

    moisten

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n well contact

if youre a mosis customer you should ask on their user group or email support@mosis.com. either way you'll get an answer from one of their engineers
 

    M

    moisten

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ibm silicide

erikl said:
Just don't put p+ (nor n+) beneath your Schottky contact(s), i.e. active area only, and probably you'll need the SAB layer in order to block the salicide beneath the Schottky contacts. Surely you'll get DRC errors. For the n-well contacts, use standard n+ well taps.
Click to expand...

No, in my design kit, there's no layer which blocks the p+ source/drain implant, only a layer to block the n+ source/drain implant (identifies PFETs, P+ junctions and substrate contact) So I remove the active area beneath Schottky contact.
In addition, I should not block the salicide because silicide is used to form the contact.

Added after 1 minutes:

snafflekid said:
Is this ever done before, or is it an experiment?
Click to expand...

There are some papers on this. And they have used the Schottky diode in ckt.

Added after 46 seconds:

oermens said:
if youre a mosis customer you should ask on their user group or email support(at)mosis.com. either way you'll get an answer from one of their engineers
Click to expand...

Thanks!
 

taps over nwell

We have submitted the layout, but the foundry does not accept the layout with errors. So the silicide and N-well contact Schottky diode cannot be fabricate in this process.
 

well contact

Thanks for the feedback, and sorry to hear this!
Didn't you try to get green light / an approval from the fab engineers before?
 

what is the use of n-well contact

erikl said:
Thanks for the feedback, and sorry to hear this!
Didn't you try to get green light / an approval from the fab engineers before?
Click to expand...

No, this is my first time to use this process.
We are using another process which provides SBD pcell.
 

schottky diodesubstrate contact

No, this is my first time to use this process.
We are using another process which provides SBD pcell.[/quote]

What is this SBD pcell ?
 

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