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hi
mos capacitor is basically a mosfet without source and drain. Eg take the case of an nmos when the gate is not connected to any voltage there is a large number of holes in the substrate being a p type and a few electrons ( the minority carriers) but as soon as the +ive voltage is applied to the gate the holes start moving deep into the substrate and the surface near the oxide bulk junction start depleting and -ive ions are created there which ballance the charge on the gate hence the capacitance is bcoz of the oxide now as we keep on increasing the charge on gate the depleation region moves deep into the bulk and simultaneously the genration of minority carriers start occuring in the bulk and these minority carriers move up near the interface and now 2 capacitances come into action is oxide capacitance and the other is depletion capacitance as more and more electrons come near surface the surface becomes inverted and there is sufficient charge to ballance the charge on gate and now capacitance is between gate and channel and it is oxide capacitance
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