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What are the different reasons for the channel length to be 22nm,35nm,70 nm etc.?

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What are the different reasons for the channel length to be 22nm,35nm,70 nm etc. Why these specific numbers other than fabrication constraints?
 

Re: Different Channel lengths

in mosfets
 

Re: Different Channel lengths

Generally because that is the only processes and device models the foundries offer. It take a considerable amount of time and money to do parametric extraction to set up the device models for each generation. So offering too many does not make sense.
You probably know of 180nm 130nm and 90nm. What you probably have not heard of are well established processes at 150nm, 110nm, 100nm and 80nm that IDMs have internally. 150nm was a squeeze on the 180nm using the same lithography equipment that was not capable of resolving 130nm, so a way of shrinking die size at no added capital costs to the fab. 90nm required a new type of UV lithography wavelength and was very expensive. So 130nm fabs developed squeeze technologies at 120, 110 and 100nm but you never get to hear about them.
 
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Re: Different Channel lengths

does the rule

"in a year the no of transistors fitted into a chip doubles" hold good in these size determinations
 

Re: Different Channel lengths

does the rule

"in a year the no of transistors fitted into a chip doubles" hold good in these size determinations

The law actually states that the number of transistors will double every two years. The period is often quoted
to be 18 months, this is due to the statement of a Intel executive who fitted the law to chip performance doubling.
Moore's law still holds true. The 22nm process and 3D structures announced by Intel, the law will stay true for a long while.
 
Parallel cores is part of functionality (18 months) But parallel will in help with the doubling of transistors (gates etc. made out of transistors).
 
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