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But if I increase the width, Id increases and Vds remains constant. How to ensure Id remains constant with increased width for finite dc-feed inductance. How do you estimate the MOSFEt capacitance? I run dc analysis with the sitch in cut-off state and see the various cap values and use the...
Thanks,
Could you please explain, How to reduce the Vds, So as to achieve a current flow of about 9mA through the dc-feed inductance and still use MOSFET of 840µm. I cannot see any way of increasing the Ql without decreasing the Load R.( As L0 and C0 are at boundry values for UMC...
thanks a lot, So my Switching waveforms seems ok, right? if you neglect the non-zero On voltage. I could not reduce it without degrading the PAE to unsuitable level. As with increased size ( reduced Ron) the current increases. I am also getting a distorted sine wave. So what should be the...
Actually the choke should be 46nH for R = 72 (required power and Vdd) The problem is due to use on finite dc-feed inductance the drain current is not constant.
thanks Masoud180,
I am referring the same paper for finite dc-feed inductance.
Problem is with getting sufficient values for L0 and c0 with Ql(loaded Q) = 3 or more.
eg. If I set Ql = 3, and R = 72 and I get l0 = 14nH which is manageable but C0 = 0.3pF is too low. at 2.45Ghz. Also I should size...
Hello everyone,
I have to design a class E output stage for Pout= 8mW (targeted for zigbee type apps ) with fc = 2.45Ghz using UMC 180nm RFCMOS technology. I have gone through RF books by Lee and Crips and through Sokal et all Class E paper. but when I designed it and ran transient analysis I...
Thanks for the reply,
Could you tell me which analysis to do in cadence to get the power contours? my goal is to find the optimum power for the chosen MOSFET width. I am only simulating the power amplifier with its input conjugate matched and output connected to port(variable impedance) and how...
Hi,
I am new to power amplifier design. I had referred RF power amplifier design by Hella & Ismail. They had said to select MOSFET sizing based on efficiency( assumed) and bias condition as a starting point and then run harmonic balance analysis to find the optimum load for the chosen...
Maximum power transfer theorem states conjugate match is required for maximum power transfer but if you consider it for a active device it has limitations for eg. if your device can source maximum of 1A and has impedance of 100ohms using conjugate match the load voltage would be 50V exceeding...
Hi,
I also got similar error for UMC 180nm. I simply copied contents of each file it has load command in the main DRC file and it worked.
Hope this helps
Zopeon
I was getting the same error for TSMC 180nm tech.
Just check your assura DRC file and remove the last line, which should be a load statement for Memory DRC if you are not using memory.
Hope this helps
Zopeon
mathing of transistors
Hi,
You should go through Art of Analog Layout. I have pmd the linl. Not sure if we can give e-book link.
Also you should go through various pdfs available by just typing analog layout in google.
This can be good starting point
**broken link removed**
Hope this helps
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