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Now we want to add some filtering cap from VDD(5V) to ground on chip. There is only space left under the PAD. Some support adding some PIP caps. But others concern about the CP test security: the probing needle may add stress on the PIP cap and make it short. Does anyone have such experience...
dick_freebird, thanks for your kind reply.
I'm now trying the non-self-aligned drain to improve the VDS since no drift or LDD layer for me.
That's pull the drain active (n+) away from gate. Distance is about 0.4um. Gate length is about 0.6um.
And foundry told me I can make an experiment.
But I...
A normal .5um 5V CMOS process is now available. But the circuit should be OK under 7V's Vds. I know LDMOS is one option. But I don't want to add any more mask. Anyone who knows about it? Thanks very muck!
In my process, the substrate resistivity is 10 Ohm-cm. The main noise point is 3mm away from the pad of chip. Now I want to do the simulation considering substrate noise. How can I calculate the resistance value? If I give a estimated value ( such as 1KOhm), is that OK? Thanks.
What's the affect of die thickness in RF circuit?
Stress? Isolation? package?
I'm going to take COB as the package style.
How do I decide the thickness of the die?
Thanks a lot.
Re: Why the NF and conversion loss is the same for passive f
You'd better calculate the NF of a passive components.
That is NF=SNRin/SNRout=vnout^2/(vnin^2*A^2).
It's not a complex calculation.
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