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In 2007 a worldwide 80 billion USD investment in semiconductor materials and equipment led to 280 billion USD worth of semiconductor sales, which were built into 1.105 billion USD worth of electronics equipment, on top of which 6.500 billion USD worth of consumer services were delivered.
Does...
Hi
I want to design a short channel mosfet but i have an error in silvaco
please help me
i think the error is because of this line:
"diffus time=10 temp=900 weto2 press=1.0"
this the specification of my device:
Total Oxide Thickness: 1.5 nm
Oxide is composed of three layers: SiO2/HfO/SiON...
Hi
this is my code it seem's correct,doesn't it?
but i can not define electrode and body metal
please see this code and correct it if you need
I'm waiting for you...
#PMOS
#Bulk: n-Si (1.5x1017 #/cm3)
go athena
#
# Set up a mesh suitable for a single MOSFET device....
#
line x loc=0.0...
Hi
The oxide layer has been made of Hafnium Dioxide (HfO2) and has been grown using dry etching, in which during etching a thin layer of SiO2 will be formed as an intermediate layer between body and oxide. The thickness of SiO2 is 1 nm whereas the oxide thickness, in which is varied between 2 to...
Mos with high k dielectric gate oxide HfO2
Hi
The oxide layer of MOS has been made of Hafnium Dioxide (HfO2) and has been grown using dry etching, in which during etching a thin layer of SiO2 will be formed as an intermediate layer between body and oxide. The thickness of SiO2 is 1 nm whereas...
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