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Thanks for the response Erikl. Yes I should have mentioned triple well. And indeed yes the space charge region would be wider if the Ntub is connected to a higher voltage.
That is not true because the source and drain say of a NMOS inside the NTUB will still have a higher or equal potential to the P region enclosed inside the isolation NTUB. Correct?
This is my question though - the isolating NTUB is not in direct contact with the active regions of any...
Suppose I have a bunch of isolated PMOS/NMOS devices inside and NWELL/NBL tub. What voltage should the NWELL/NBL tub be connected to? So far I have usually seen the tub connected to the highest voltage seen by devices in the tub. For example if the device is an isolated inverter connected...
Re: how to decide the err amp output dc level in dc-dc conve
Ususally the output of your error amp will be compared to a ramp which you generate inside the chip. Suppose your ramp is between 0.5V and 1.5V then your error amp output dc level will be between those levels. The comparision between...
charge pump power supply
How is the soft start circuit for a charge pump power supply IC normally designed? The charge pump I am designing is a voltage doubler. The output is 2X Vin
The load for the charge pump is 100 mA max which means that the switch MOSFETs have to be quite large. The...
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