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Recent content by Eman kamel

  1. E

    characteristic impedance of lossy TL

    many thanks for your reply, i will try to clarify my question, i am using an abstract model for T.L, where the fare and near voltage of the transmission line is Vwin and Vwout, the near and far cureents are Iwin and I rec, the equations provided are Vwout= Vwin-Iwin Z0 where Z0 is the...
  2. E

    characteristic impedance of lossy TL

    Hi, i am trying to design a lossy transmission line with characteristic impedance Z0 i choose the RC distributed model i found that Z0=sqrt(R/wC) where Rand c are the interconnect resistance and capacitance per unit length. how i determine the required wire length? and number of RC...
  3. E

    current driver in saturation

    Hi i am working on design nmos current driver using the equations Idsat= Wg/2Lg (µnCox(VGS – Vth))^2 VDsat=VGS-vth if VDD=1 v vth=0.18 what is an appropriate value for VGS to drive the wire with low voltage swing?
  4. E

    current mode interconnect

    Hi every body:-) i am trying to design a simple current sensing interconnect , composed of a driver with current Iwin , lossy transmission line with impedance Z0, near and far- end voltage vwin, vout and receiver with termination resistance Rt nad received current Irec, i have 3 simple...
  5. E

    capacitance of minimum size inverter

    thanks alot
  6. E

    capacitance of minimum size inverter

    what is the equation for the capacitance of minimum size inverter (gate and drain capacitance)?
  7. E

    gate length for 45 nm technology

    i am choosing design parameter for 45 nm technology NMOS transistor that is a part of interconnect buffer in ptm model http://ptm.asu.edu/cgi-bin/test/nanocmos.cgi the suggested values for transistor width is 17.5 nm for NangateOpenCellLibrary http://www.eda.ncsu.edu/wiki/FreePDK45:Contents...
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    threshold voltage variation

    sorry threshold voltage variability is 3 % not 30 %
  9. E

    threshold voltage variation

    Hi every one, again i am working on 45 nm technology when ITRS reports estimates 40% threshold voltage variability it also mention that the threshold voltage variation reaches 30 % of supply voltage for VDD = 1volt threshold voltage variation will be 30 mv PTM technology model mention vth = 180...
  10. E

    Nangate open cell library

    hello every body i am using open cell library for 45 nm technology i am trying to get technology information for semi global metal layer the lef file contain 8 metal layers, i do not know which layer is considered semi global? also if i used metal 5 layer as an example i found LAYER metal5...
  11. E

    [MOVED] metal line reistance

    hi every one i calculate the interconnect resistance by unit length for 45 nm technology by the equation Rinterconnect = Resistivity/(Thickness * Width) i am using Metal Resistivity value 1.688e-2 ohm.micro meter Thickness = 0.280 micro meter Width =140 micrometer i got R interconnect 0.0004...
  12. E

    threshold voltage variation

    Hi every one, again i am working on 45 nm technology when ITRS reports estimates 40% threshold voltage variability it also mention that the threshold voltage variation reaches 30 % of supply voltage for VDD = 1volt threshold voltage variation will be 30 mv PTM technology model mention vth = 180...
  13. E

    interconnect resistance

    thanks for your help i have another questions i calculate the interconnect resistance by unit length for 45 nm technology by the equation Rinterconnect = Resistivity/(Thickness * Width) i am using Metal Resistivity value 1.688e-2 ohm.micro meter Thickness = 0.280 micro meter Width =140...
  14. E

    n mos transistor on resistance

    thanks for your help :-D i have another questions i calculate the interconnect resistance by unit length for 45 nm technology by the equation Rinterconnect = Resistivity/(Thickness * Width) i am using Metal Resistivity value 1.688e-2 ohm.micro meter Thickness = 0.280 micro meter Width =140...
  15. E

    n mos transistor on resistance

    for nmos transistor the on resistance Ron is given by the equation Rtransistor =Lg0/(Width* mu *COX*(VDD-VT0)) i use the following values Lg0 17.5 nm -> .0175 micro meter width 140 micro meter this make w/l =8000 which i think very reasonable VDD 1 volt VT0 0.18 volt from my model i found...
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