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A more controlled method is to polish off the layers. All FA labs have specially designed polishers for this, but this can be done using a modified CNC system.
The top nitride layer is most difficult.
This technique allows you to stop at eack metal then via layer. When the last metal layer...
Tungsten is used only in the vias between metal layers. So they are very small. They are cylinders where the vertical dimension >> their diameter. The tungsten deposition process (and the TiN/Ti barrier) allows efficient filling of such high aspect ratio holes. As also mentioned, the...
Most foudrys run multi project wafer (MPW) programs, about every 3 months. This allows a customer to try out a design at a lower cost. The Foundry gives the customer about 50 parts (devices) for a cost of about $20,000 USD. So it is not cheap. Also, this is just the bare silicon device - not...
If you are referring to the example mos1ex01.in, this simulation is only for a constant Vds - 0.1V so there is no data for any other drain voltage except 100mV.
mos1ex02.in runs a simulation sweeping Vds for 3 gate voltages. I think this is what you are wanting.
Think of the battery as providing potential energy (electric field) rather than kinetic energy (electrons flow).
When a depletion region is created due to the diffusion of electrons and holes across the PN junction, the depletion region becomes an insulator across which there is no motion of any...
I think there is an error in this. In a 65 nm technology, printed linewidths cannot go below 65nm but the effective transistor width or electrical width (Leff) can go as low as 25 nm.
The pitch is just the minimum length of gate + minimum space between gates.
The only reason I can see for doing this would be an epi silicon process.
So to simulate an epi deposition in a boron ambient that dopes the epi-silicon, use the command:
diffuse thick=5.0<um> temperature=1090<C> time=30.0<min> epi epi_doping = {Boron = 1e18} epi_layers=100
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