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The threshold voltage specified in LVT/SVT/HVT does it refer to stanadard cell or MOSFET charecteristics
what is the relation between Cell and MOS FET Threshold charecteristics
he CMOS Inverter structure creates two parasitic transistors namely PNP & NPN as shown in enclosed Fig.These transistors so exist such that each collector drives the Base of the other BJT. This results in formation of a pnpn switch that exists across VDD/VSS supply line.When the breakdown...
The complimentary operation is that at any given point of time only one MOS is On.Hence the standing/quiescent current thru the MOS is minimized.This results in reduction of static power disipation
ASIC designed in the virtual environment are physically procesed and fabricated in the Foundry.To make them cost effective they are manufactured as batch .A batch of wafers(say twenty of 10"Dia) are processed simltaneously.Each wafer consists of several dies(chip) which are subsiquently cut and...
Adding Buffer in aTiming violated path will further add propogation delay.You can look at Timing Report of the violated path to identify most contributing delays of gates/ nets.Optimize by up/down sizing the gates and also try rerouting nets.
Hi mujju
Please find enclosed here with the simulation waveform of the circuit:
The enclosed waveforms starting from bottom indicate 1) MoS Inverter output 2)The current waveform thru Resistor(5K used) placed across top BJT Emitter base (This shape also indicates the Emitter base Voltage wave...
Condition I:
@ Vin= LOW, when Vdd-Vc(out)High<Vbe2(cutin) - Q2 is OFF
Condition II
@ Vin= HIGH. When Vc(out)LOW<Vbe1(cutin)- Q1 is OFF
with an assumption that the Vds(sat) of Mp and MN are negligible
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