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I am CMOS VLSI circuit design engineer. We dont care source and drain connection as long as it is a 4 terminal device and body is connected to required potential, for our product development. that is NMOS body to vss and PMOS body to VDD. In layout also one does not need to care for source /...
As per the construction it is important to note Source and Drain is reversible ( unless body is connected to the source). The Max Vgs ratings is most likely the safe limit voltage of gate Oxide breakdown. If it is so then a high Vgd also can make a break down of the oxide. Thats why I asked...
Why there is max Vgs (usually +-20v) rating for power mosfet? Does it also apply to Vgd? If it applies then how max Vds rating is very high compare to Vgs , bcoz (considering NMOS) with Gate Source sorted Vgd will be really high if it is operating at max Vds?
Hi all,
We all know about the C-V characteristics of a MOS (MOSCAP Or MOSFET). It is the gate capacitance at different Vg.
I am trying to extract the C-V characteristics in spice. The process is like this
nmos1 0 gate 0 0 nmos L=0.180U W= 0.270U
Vin gate 0 DC 0 sin(0 0.1 1K)...
Hi every body,
I am trying to exploit the features of USB accessory mode of Android 2.3.4: Gingerbread. For this purpose I am using Vinculum-II (USB Host controller from FTDI). I got some example codes from the FTDI & also from Developer guide...
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