Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.
umermfp2000,
The tunnel diode exploits quantum mechanical tunnelling to achieve a negative resistance characteristic, i.e., the current increases as the voltage decreases. This effect can be used to produce oscillators and high speed switches. As the speed of more conventional semiconductor devices increased over the years, the tunnel diode has almost sunk into oblivion.
Regards,
Kral
A tunnel diode is a semiconductor with a negative resistance region that results in very fast switching speeds , up to 5 GHz. The operation depends upon a quantum mechanic principle known as "tunneling" wherein the intrinsic voltage barrier (0.3 Volt for Germanium junctions) is reduced due to doping levels which enhance tunneling.
This site uses cookies to help personalise content, tailor your experience and to keep you logged in if you register.
By continuing to use this site, you are consenting to our use of cookies.
