lufer17
Member level 5
I know that when implementing ionic using a dopant (example aletorio boron ) in the machine that makes the ionic implantation on top of the silicon material, it ends up shooting inserted dopants on top of the silicon. I know implementing ionico has greater flexibility, particularly if shallow doping depths and low doping densities are required.
My doubts:
1- Greater flexibility: greater diversity of materials that can be doped?
2- depth controlled, but can get doped layers?
My doubts:
1- Greater flexibility: greater diversity of materials that can be doped?
2- depth controlled, but can get doped layers?