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question on low drop out regulator

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leonken

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Two kind of regulators: NMOS pass device and PMOS pass device.
Why the voltage drop across the pass deivce of PMOS is smaller than the NMOS?

Added after 37 minutes:

The figure
 

voltage drop using NMOS is determined by VGS
while using PMOS it is determined by VDS
you can find the difference
 

For NMOS, Vin >VG>VS(Vout)+VTN, so VDS=Vin-Vout>VTN, but for PMOS, no such formula is expected.
 

Because the Vdd(Vin) of the opamp is supplied by Vin. The output of opamp is less than Vdd(Vin).
 

Hi,Leonken:

For NMOS , Vin is the supply of OPAMP,so Vin >VG>Vout+VTN should be met.
so VDS=Vin-Vout>VTN (about ~700mV in 0.35um process)

For PMOS,you only need to make VSD=Vin-Vout larger than Vdsat(usually about 100mV~300mV)

So the PMOS LDO headroom is larger than NMOS LDO. It is the NMOS Source follower that reduces your headroom.

Best regards!

Chenmy
 

Some LDO add a charge-pump and can also realize low drop-out with NMOS
 

because the nmos' Vgs
 

if u apply pmos pass devic the it will give u gain and phase shift of 180.
when u use nmos as pass device then it will act as a source follower.
so unity gain and no phase shift.
 

one is source follower and the other is simply common source stage
 

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