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Mosfet parameters - few questions

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lionelgreenstreet

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Mosfet parameters

I have some questions about mosfet parameters:
1) Threshold Voltage:depends on channel length L (with a fixed process technology)? If the same process technology is used, threshold voltage changes with L or not?
2)channel length modulation: if the same process technology and the same L are used, modulation parameter changes with W or not?
3)electron mobility: i have posted the same question in an old topic (), but i repost it in this new topic with newer questions...I understand electron mobility relationship with L, but i don't understand its relationship with W....can you help me?
 

Mosfet parameters

1) & 2) --- in the case of very short channels everything changes with L & W, I suppose.
In BSIM models there are rather complicated algorithms for Weff and Leff calculations...
 

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