ElecDesigner
Member level 5
Hi.
My understanding thus far is that in MOSFET datasheets the maximum dv/dt is specified (generally as a number of volts per ns).
I read somewhere that this applies to the rising of the voltage between the D and S (eg when the MOSFET turns off). EG your actual rising edge signal must be slower than the spec to prevent MOSFET failure. Is this correct?
Does anything apply to the MOSFET turn on (falling of voltage between D and S)?
Cheers.
My understanding thus far is that in MOSFET datasheets the maximum dv/dt is specified (generally as a number of volts per ns).
I read somewhere that this applies to the rising of the voltage between the D and S (eg when the MOSFET turns off). EG your actual rising edge signal must be slower than the spec to prevent MOSFET failure. Is this correct?
Does anything apply to the MOSFET turn on (falling of voltage between D and S)?
Cheers.