dac5bits
Banned
sharing of nwell in device and guard ring
when the PMOS source is connected to the well to remove the body effect (standard CMOS n-well process) should the guard ring surrounding the pmos be an n-well connected vdd or a substrate contact ring connected to vss?
Thanks for looking.
when the PMOS source is connected to the well to remove the body effect (standard CMOS n-well process) should the guard ring surrounding the pmos be an n-well connected vdd or a substrate contact ring connected to vss?
Thanks for looking.