g.s.javed
Member level 1
HI .
I am designing a MOS device to drive 600mA (0.6 A).
The switching frequency desired for this device is 200K Hz.
The technology used is 0.6um.
So, I have the idea that the gate capacitance of the device has to be charged and discharged for switching operation.
The device size needed is (my approx calculation. Please correct me if I am wrong)
W = 1357um L = 3um.
This value was obtained for Id=600mA at VGS = 15V.
Also, the books say at saturation , Cgs=CGSO*Weff + 2/3*Cox*Leff*Weff
the device details give CGSO = 2e-10 tox = 4.1e-8
For these values, after calculation I got the CGS = 2.258pF
Now my question is , Is this calculation right ??
I am having serious doubts, as the device size is very large and the switching frequency also is very high.
I could use with some brainstorming.
I would pick each one of yours brains for it.
Thank you
Regards
Javed
P.S. : It is infact 0.6A and not a typo error.
I am designing a MOS device to drive 600mA (0.6 A).
The switching frequency desired for this device is 200K Hz.
The technology used is 0.6um.
So, I have the idea that the gate capacitance of the device has to be charged and discharged for switching operation.
The device size needed is (my approx calculation. Please correct me if I am wrong)
W = 1357um L = 3um.
This value was obtained for Id=600mA at VGS = 15V.
Also, the books say at saturation , Cgs=CGSO*Weff + 2/3*Cox*Leff*Weff
the device details give CGSO = 2e-10 tox = 4.1e-8
For these values, after calculation I got the CGS = 2.258pF
Now my question is , Is this calculation right ??
I am having serious doubts, as the device size is very large and the switching frequency also is very high.
I could use with some brainstorming.
I would pick each one of yours brains for it.
Thank you
Regards
Javed
P.S. : It is infact 0.6A and not a typo error.