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Errors in the Layout after DRC

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urn

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Hi,

I am using MOSIS 0.35um process. While doing the layout, after DRC i am getting the following errors.

1) LATI. 3A N-Well PICK-UP to PMOS max space < 20um
2) LATI. 3A P-Well PICK-UP to NMOS max space < 20um

Can anyone help me solving these errors.

Thanks in advance,
 

You need more body ties than you have put down, closer to
the transistor. And you may need to respect some max finger
width rules implicit in such tie-spacing requirements.
 

Yes,pls add more N+ contacts for Nwell of PMOS and add more P+ contacts for p-sub of NMOS. For every NMOS/PMOS, it should have body contact within 20um around it.
 

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