jy00349890
Newbie level 2
Hello everyone,
I am doing a simulation to draw the current (Ion) curve of a pmos transistor with different numbers of fingers for a certain width. The currents should decrease when more fingers are applied. while in my simulation result, the current is increasing following the increment of the number of fingers.
The code is shown below:
********************************************************************
SPICE test of power gating 65nm
.LIB 'lib/st065/LPmos_bsim4_hvt.lib' hvtlp_tt
.LIB 'lib/st065/common_poly_cd.lib' pro_tt
.LIB 'lib/st065/common_active_cd.lib' pro_tt
.LIB 'lib/st065/common_go1.lib' pro_tt
.LIB 'lib/st065/common_poly_res.lib' pro_tt
.LIB 'lib/st065/common_active_res.lib' pro_tt
.LIB 'lib/st065/diodeiso.lib' diodeiso_typ
.LIB 'lib/st065/mismatch.lib' mismatch_no
.global vdd 0 vss
.param vs=1.0
.param vd=0.99
.param def_w=100
.param def_l=0.09
**** Voltage sources ****
V1 psource gnd 'vs'
V2 pdrain gnd 'vd'
**** Test circuit ****
.TEMP 125
**simulation for Ion, Vds = 10mv
xpmos1 pdrain gnd psource psource phvtlp w = 100 l = 'def_l' nfing = 'finger'
** Default Simulation - Type, Resolution & Duration
.TRAN 10PS 100NS sweep finger 10 200 10
.meas tran Ion avg I(V2) from=10ns to=20ns
.END
******************************************************************
The subckt of this low power high vth pmos and the most important parameters are shown below
******************************************************************
.subckt phvtlp d g s b
+ w = 0.12
+ l = 0.06
+ nfing = 1
+ tometer = 1e-06
+ mult = 1
.param wm = 'w*tometer'
.param lm = 'l*tometer'
M1 d g s b phvtlp w='wm/nfing'
+ l=lm
+ m='mult*nfing'
+ nf=1
......
.ends
*****************************************************************
Are there any bugs in this netlist? or the current should increase following the increment of finger numbers for 65nm high vth cmos?
Thanks
I am doing a simulation to draw the current (Ion) curve of a pmos transistor with different numbers of fingers for a certain width. The currents should decrease when more fingers are applied. while in my simulation result, the current is increasing following the increment of the number of fingers.
The code is shown below:
********************************************************************
SPICE test of power gating 65nm
.LIB 'lib/st065/LPmos_bsim4_hvt.lib' hvtlp_tt
.LIB 'lib/st065/common_poly_cd.lib' pro_tt
.LIB 'lib/st065/common_active_cd.lib' pro_tt
.LIB 'lib/st065/common_go1.lib' pro_tt
.LIB 'lib/st065/common_poly_res.lib' pro_tt
.LIB 'lib/st065/common_active_res.lib' pro_tt
.LIB 'lib/st065/diodeiso.lib' diodeiso_typ
.LIB 'lib/st065/mismatch.lib' mismatch_no
.global vdd 0 vss
.param vs=1.0
.param vd=0.99
.param def_w=100
.param def_l=0.09
**** Voltage sources ****
V1 psource gnd 'vs'
V2 pdrain gnd 'vd'
**** Test circuit ****
.TEMP 125
**simulation for Ion, Vds = 10mv
xpmos1 pdrain gnd psource psource phvtlp w = 100 l = 'def_l' nfing = 'finger'
** Default Simulation - Type, Resolution & Duration
.TRAN 10PS 100NS sweep finger 10 200 10
.meas tran Ion avg I(V2) from=10ns to=20ns
.END
******************************************************************
The subckt of this low power high vth pmos and the most important parameters are shown below
******************************************************************
.subckt phvtlp d g s b
+ w = 0.12
+ l = 0.06
+ nfing = 1
+ tometer = 1e-06
+ mult = 1
.param wm = 'w*tometer'
.param lm = 'l*tometer'
M1 d g s b phvtlp w='wm/nfing'
+ l=lm
+ m='mult*nfing'
+ nf=1
......
.ends
*****************************************************************
Are there any bugs in this netlist? or the current should increase following the increment of finger numbers for 65nm high vth cmos?
Thanks