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[SOLVED] 180nm technology parameters

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ldacwang

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What are effective channel length, gate oxide thickness and Vdd fro 180nm technology?
Thanks
 

Well, this is easily googlable.

First of all, it greatly depends on specific technology.

Vdd ~1.4-1.8v
Channel length ~150-200nm
Gate oxide ~3-5nm
 
the vdd for 180n technology is usually 1.8V.
 

Effective channel length will be close to 130nm if the drawn L is 180nm due to lateral diffusion of the extension implants beneath the spacer.
 

Standard "Logic" process usually contains the set of at least two types of transistors: "Thin" - for lower voltage (usually 1.8V, ~30A thickness) and "Thick" - for higher voltage (3.3 - 5V, ~70A & 120A thickness). In case of "thick" transistor min channel length is ~.3um for 3.3V devices and .5-.6um for 5V.
 
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