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In SiGe and GaAs technology 'gm' and 'ft' is higher than the CMOS process.....my question is.....what are the advantages having higher 'gm' and higher 'ft'?
Higher ft means ur transistors can act as amplifiers till higher frequency as after ft ur gain becomes<1.
So inhrently SiGe technology can be used for very high speed circuits(may be100s of GHz).But that in case of CMOS may be around 30-40GHz again depending ur technology and transistor length.)
High gm means higher transconductance and for transconductance amplifiers u get higher gain with them.)But the key advantage due 2 which CMOS is still surviving is it's inherent low power nature and high scalability.
Hope it helps.
Since The mobility is higher than the Si, you can achieve more frecuency with higher ft(logic circuits becomen very fast switches) and more gain with a higer gm!!
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