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**broken link removed**But for PMOS, it is a different case. Because PMOS transistors
are built on an n-type substrate, the positive trapped
charges caused by radiation cannot deplete or inverse the ntype
substrate. As a result, after radiation the magnitude of the
threshold voltage of the parasitic transistors will not be reduced
and the 1/f noise will not increase. That is the reason why
PMOS transistors are more resistant to radiation damage than
NMOS.