mtwieg
Advanced Member level 6
My academic research is centered around SMPA development, and one of the major issues I have to address is characterizing the output "impedance" of such topologies as class E or current-mode class D (basically if you put inject a voltage source between the amp output and its load, how is the RF current changed?). But from what I can tell, there is no way to define a single number for output impedance, since the amp is, from the load's perspective, a time-varying (depending on the phase of your injected signal and that phase of the drive signal to the amp) and non-linear (assuming the switch can only operate in one quadrant, as all do) system. So one should expect the effective output impedance to depend on the amplitude of both the injected signal, the amplitude of the signal from the amp, and the phase between the two.
So I'm wondering if there's any standard way of characterizing these systems? I've read up on large-signal S-parameters, but these seem directed at linear amps operating at or near compression, where these effects aren't very severe. From what I've researched so far, all the assumptions that typical schemes are based on break down when you have hard-switched transistors involved.
Any guidance would be appreciated.
So I'm wondering if there's any standard way of characterizing these systems? I've read up on large-signal S-parameters, but these seem directed at linear amps operating at or near compression, where these effects aren't very severe. From what I've researched so far, all the assumptions that typical schemes are based on break down when you have hard-switched transistors involved.
Any guidance would be appreciated.