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The only control over what it can stand, is temperature
and service-factor. To make it stand more, you'd work
on making it less dissipative (on resistance, sharp gate
drive edges to minimize time in lossy regions). But a RF
PA designed for low cost will use as crappy a process
as you can get away with, forcing a poorer trade there).
Your load impedance and high side voltage set the
max power, your transistor efficiency sets the dissipation,
so controlling high side voltage is another "handle". Not
specifically to "how much it can take", but limiting the
applied power to below that level.
thanks so much but how can i know that the transistor could bear this high current ? I 'd like to know equations .May be if you have good references for that , u could give me some
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