how to calculate Leff & Weff for 18o nm tech

hello every one


while calculating Leff, i need LD where i will get value of LD? In TSMC180 i didnt find LD & WD values?
plz reply

Re: how to calculate Leff & Weff for 18o nm tech

Here's an old TSMC 0.18um Mixed Signal Spice Model file, which includes these values (there, named LDELTA & WDELTA):

hello ,

i am attaching my file, will you plz tell me where is LD & WD in my file. or if i'll use value given by ur file is their any problem in calculation?
coz i find difference in ur & mine file.

TSMC180 file as below



* MOSIS WAFER ACCEPTANCE TESTS

* RUN: T55U (LO_EPI) VENDOR: TSMC
* TECHNOLOGY: SCN018 FEATURE SIZE: 0.18 microns
* Run type: SKD


*INTRODUCTION: This report contains the lot average results obtained by MOSIS
* from measurements of MOSIS test structures on each wafer of
* this fabrication lot. SPICE parameters obtained from similar
* measurements on a selected wafer are also attached.

*COMMENTS: DSCN6M018_TSMC


*TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS

* MINIMUM 0.27/0.18
* Vth 0.51 -0.52 volts

* SHORT 20.0/0.18
* Idss 584 -290 uA/um
* Vth 0.53 -0.52 volts
* Vpt 4.7 -5.4 volts

* WIDE 20.0/0.18
* Ids0 23.1 -17.9 pA/um

* LARGE 50/50
* Vth 0.44 -0.42 volts
* Vjbkd 3.2 -4.1 volts
* Ijlk <50.0 <50.0 pA

* K' (Uo*Cox/2) 172.9 -35.2 uA/V^2
* Low-field Mobility 410.59 83.59 cm^2/V*s

*COMMENTS: Poly bias varies with design technology. To account for mask
* bias use the appropriate value for the parameters XL and XW
* in your SPICE model card.
* Design Technology XL (um) XW (um)
* ----------------- ------- ------
* SCN6M_DEEP (lambda=0.09) 0.00 -0.01
* thick oxide 0.00 -0.01
* SCN6M_SUBM (lambda=0.10) -0.02 0.00
* thick oxide -0.02 0.00


*FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS
* Vth Poly >6.6 <-6.6 volts


*PROCESS PARAMETERS N+ P+ POLY N+BLK PLY+BLK M1 M2 UNITS
* Sheet Resistance 6.5 7.5 7.7 60.6 313.8 0.08 0.08 ohms/sq
* Contact Resistance 9.9 10.4 9.1 4.69 ohms
* Gate Oxide Thickness 41 angstrom

*PROCESS PARAMETERS M3 POLY_HRI M4 M5 M6 N_W UNITS
* Sheet Resistance 0.08 1855.0 0.08 0.08 0.04 935 ohms/sq
* Contact Resistance 10.87 15.76 20.68 22.72 ohms

* COMMENTS: BLK is silicide block.


*CAPACITANCE PARAMETERS N+ P+ POLY M1 M2 M3 M4 M5 M6 D_N_W N_W UNITS
* Area (substrate) 966 1172 105 39 19 13 8 8 3 124 aF/um^2
* Area (N+active) 8378 55 20 14 11 9 8 aF/um^2
* Area (P+active) 8164 aF/um^2
* Area (poly) 65 17 10 7 5 4 aF/um^2
* Area (metal1) 37 14 9 7 5 aF/um^2
* Area (metal2) 38 14 9 6 aF/um^2
* Area (metal3) 39 15 9 aF/um^2
* Area (metal4) 38 14 aF/um^2
* Area (metal5) 35 aF/um^2
* Area (r well) 989 aF/um^2
* Area (no well) 142 aF/um^2
* Fringe (substrate) 268 231 -- 59 54 41 23 -- aF/um
* Fringe (poly) 62 38 29 24 20 17 aF/um
* Fringe (metal1) 56 35 22 19 aF/um
* Fringe (metal2) 49 35 27 23 aF/um
* Fringe (metal3) 53 34 28 aF/um
* Fringe (metal4) 58 36 aF/um
* Fringe (metal5) 57 aF/um


*CIRCUIT PARAMETERS UNITS
* Inverters K
* Vinv 1.0 0.75 volts
* Vinv 1.5 0.79 volts
* Vol (100 uA) 2.0 0.08 volts
* Voh (100 uA) 2.0 1.64 volts
* Vinv 2.0 0.82 volts
* Gain 2.0 -22.30
* Ring Oscillator Freq.
* D1024_THK (31-stg,3.3V) 331.24 MHz
* DIV1024 (31-stg,1.8V) 419.10 MHz
* Ring Oscillator Power
* D1024_THK (31-stg,3.3V) 0.07 uW/MHz/gate
* DIV1024 (31-stg,1.8V) 0.02 uW/MHz/gate

* COMMENTS: DEEP_SUBMICRON




* T55U SPICE BSIM3 VERSION 3.1 PARAMETERS

*SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8

* DATE: Jul 29/05
* LOT: T55U WAF: 3003
* Temperature_parameters=Default
.MODEL NMOS NMOS ( LEVEL = 49
+VERSION = 3.1 TNOM = 27 TOX = 4.1E-9
+XJ = 1E-7 NCH = 2.3549E17 VTH0 = 0.3719233
+K1 = 0.5847845 K2 = 1.987508E-3 K3 = 1E-3
+K3B = 3.846051 W0 = 1.00001E-7 NLX = 1.66359E-7
+DVT0W = 0 DVT1W = 0 DVT2W = 0
+DVT0 = 1.616073 DVT1 = 0.4422105 DVT2 = 0.0205098
+U0 = 276.4769418 UA = -1.287181E-9 UB = 2.249816E-18
+UC = 5.695845E-11 VSAT = 1.050018E5 A0 = 1.8727159
+AGS = 0.4223855 B0 = -8.460618E-9 B1 = -1E-7
+KETA = -6.583564E-3 A1 = 0 A2 = 0.8925017
+RDSW = 105 PRWG = 0.5 PRWB = -0.2
+WR = 1 WINT = 0 LINT = 1.509138E-8
+XL = 0 XW = -1E-8 DWG = -3.993667E-9
+DWB = 1.211844E-8 VOFF = -0.0926198 NFACTOR = 2.4037852
+CIT = 0 CDSC = 2.4E-4 CDSCD = 0
+CDSCB = 0 ETA0 = 2.64529E-3 ETAB = -1.113687E-5
+DSUB = 0.0107822 PCLM = 0.7114924 PDIBLC1 = 0.1861265
+PDIBLC2 = 2.341517E-3 PDIBLCB = -0.1 DROUT = 0.708139
+PSCBE1 = 8E10 PSCBE2 = 9.186022E-10 PVAG = 5.128699E-3
+DELTA = 0.01 RSH = 6.5 MOBMOD = 1
+PRT = 0 UTE = -1.5 KT1 = -0.11
+KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9
+UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4
+WL = 0 WLN = 1 WW = 0
+WWN = 1 WWL = 0 LL = 0
+LLN = 1 LW = 0 LWN = 1
+LWL = 0 CAPMOD = 2 XPART = 0.5
+CGDO = 7.9E-10 CGSO = 7.9E-10 CGBO = 1E-12
+CJ = 9.604799E-4 PB = 0.8 MJ = 0.3814692
+CJSW = 2.48995E-10 PBSW = 0.8157576 MJSW = 0.1055989
+CJSWG = 3.3E-10 PBSWG = 0.8157576 MJSWG = 0.1055989
+CF = 0 PVTH0 = -4.358982E-4 PRDSW = -5
+PK2 = 2.550846E-4 WKETA = 1.466293E-3 LKETA = -7.702306E-3
+PU0 = 23.8250665 PUA = 1.058432E-10 PUB = 0
+PVSAT = 1.294978E3 PETA0 = 1.003158E-4 PKETA = -3.857329E-3 )
*
.MODEL PMOS PMOS ( LEVEL = 49
+VERSION = 3.1 TNOM = 27 TOX = 4.1E-9
+XJ = 1E-7 NCH = 4.1589E17 VTH0 = -0.3955237
+K1 = 0.5694604 K2 = 0.0291529 K3 = 0.0997496
+K3B = 13.9442535 W0 = 1.003165E-6 NLX = 9.979192E-8
+DVT0W = 0 DVT1W = 0 DVT2W = 0
+DVT0 = 0.5457988 DVT1 = 0.2640392 DVT2 = 0.1
+U0 = 118.0169799 UA = 1.591918E-9 UB = 1.129514E-21
+UC = -1E-10 VSAT = 1.545232E5 A0 = 1.6956519
+AGS = 0.3816925 B0 = 4.590751E-7 B1 = 1.607941E-6
+KETA = 0.0142165 A1 = 0.4254052 A2 = 0.3391698
+RDSW = 168.2822665 PRWG = 0.5 PRWB = -0.5
+WR = 1 WINT = 0 LINT = 3.011839E-8
+XL = 0 XW = -1E-8 DWG = -4.05222E-8
+DWB = 4.813652E-9 VOFF = -0.099839 NFACTOR = 1.8347784
+CIT = 0 CDSC = 2.4E-4 CDSCD = 0
+CDSCB = 0 ETA0 = 0.201776 ETAB = -0.1409866
+DSUB = 1.0474138 PCLM = 1.4195047 PDIBLC1 = 2.422412E-4
+PDIBLC2 = 0.022477 PDIBLCB = -1E-3 DROUT = 1.228009E-3
+PSCBE1 = 1.245755E10 PSCBE2 = 3.598031E-9 PVAG = 15.0414628
+DELTA = 0.01 RSH = 7.5 MOBMOD = 1
+PRT = 0 UTE = -1.5 KT1 = -0.11
+KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9
+UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4
+WL = 0 WLN = 1 WW = 0
+WWN = 1 WWL = 0 LL = 0
+LLN = 1 LW = 0 LWN = 1
+LWL = 0 CAPMOD = 2 XPART = 0.5
+CGDO = 6.34E-10 CGSO = 6.34E-10 CGBO = 1E-12
+CJ = 1.177729E-3 PB = 0.8467926 MJ = 0.4063096
+CJSW = 2.417696E-10 PBSW = 0.851762 MJSW = 0.3387253
+CJSWG = 4.22E-10 PBSWG = 0.851762 MJSWG = 0.3387253
+CF = 0 PVTH0 = 1.406461E-3 PRDSW = 11.5261879
+PK2 = 1.718699E-3 WKETA = 0.0353107 LKETA = -1.277611E-3
+PU0 = -1.4642384 PUA = -6.79895E-11 PUB = 1E-21
+PVSAT = 50 PETA0 = 1.003152E-4 PKETA = -3.103298E-3 )
*

pratibhagupta said:

... will you plz tell me where is LD & WD in my file.

Click to expand...

Your file doesn't contain these parameters. May be they're hidden somewhere in a general process file. Try and search for them!

pratibhagupta said:

... if i'll use value given by ur file is their any problem in calculation?

Click to expand...

Don't think so. Their values seem reasonable. Note: the given parameters are extracted (adapted) values. I'd use them rounded to 2 places, i.e. LD=-2.2E-11 and WD=-74E-11 for the 1.8V MEDIUM VT NMOS DEVICE MODEL.