ClearWaterNW
Newbie level 6
1. The problem statement, all variables and given/known data
Here are the model parameters...
VTH0 (VTH NMOS) = 0.7 to get everything even...
U0 (NMOS un) = 533 cm^2 / V sec or 533000000 um^2 / V sec
t0x = 1.41 * 10^-8 m or 0.0141 um
eox = 3.97 * 8.85 aF/um or .000035.1345 uF / um
Also...
VDD = 5V
W/L = 10/2
2. Relevant equations
Idsat = 1/2*KPn*W/L*(VDD-VTHN)^2
3. The attempt at a solution
Must solve for Kpn = un * eox/tox first...
Using the values above I feel I get an unreasonable value of about 1.33 uA / V^2
This results in an Idsat of roughly 10 uA
A more reasonable result would give me a KPn of roughly 100 uA/V^2 according to the book I am using
Also, simulation using NMOS of same model and dimensions results in 1mA of current.
There must be something wrong with the process model or I am missing a parameter or something. I am positive my units and calculations are correct as I have been through this problem many times.
Any tips much appreciated!
Here are the model parameters...
VTH0 (VTH NMOS) = 0.7 to get everything even...
U0 (NMOS un) = 533 cm^2 / V sec or 533000000 um^2 / V sec
t0x = 1.41 * 10^-8 m or 0.0141 um
eox = 3.97 * 8.85 aF/um or .000035.1345 uF / um
Also...
VDD = 5V
W/L = 10/2
2. Relevant equations
Idsat = 1/2*KPn*W/L*(VDD-VTHN)^2
3. The attempt at a solution
Must solve for Kpn = un * eox/tox first...
Using the values above I feel I get an unreasonable value of about 1.33 uA / V^2
This results in an Idsat of roughly 10 uA
A more reasonable result would give me a KPn of roughly 100 uA/V^2 according to the book I am using
Also, simulation using NMOS of same model and dimensions results in 1mA of current.
There must be something wrong with the process model or I am missing a parameter or something. I am positive my units and calculations are correct as I have been through this problem many times.
Any tips much appreciated!
