ace_operations
Junior Member level 3
Hi,
I am trying to simulate a microstrip line with 3um thickness, 50um width (Z0~85 ohms) and 1000um length on a substrate with various resistivities such as 1e3 ohms-cm to 1e6 ohms-cm using HFSS. I have used lumped ports and an airbox that is at least λ/4 at the lowest simulation frequency. I am trying to extract the RLGC parameters of this microstrip line from 0.1 to 10 GHz for each substrate resistivity.
My solution setup is defined for Δs = 0.01, and my meshing frequency is at 10 GHz. I am using an interpolating sweep to obtain S-parameters from 0.1 GHz - 10 GHz. I hope I have completely described my simulation setup.
My problem is that for each substrate resisitivity, the RLGC parameters extracted are exactly the same. This is unrealistic because the substrate losses should cause G to increase when substrate resistivity drops. Has anyone faced similar iissues?
Thanks.
I am trying to simulate a microstrip line with 3um thickness, 50um width (Z0~85 ohms) and 1000um length on a substrate with various resistivities such as 1e3 ohms-cm to 1e6 ohms-cm using HFSS. I have used lumped ports and an airbox that is at least λ/4 at the lowest simulation frequency. I am trying to extract the RLGC parameters of this microstrip line from 0.1 to 10 GHz for each substrate resistivity.
My solution setup is defined for Δs = 0.01, and my meshing frequency is at 10 GHz. I am using an interpolating sweep to obtain S-parameters from 0.1 GHz - 10 GHz. I hope I have completely described my simulation setup.
My problem is that for each substrate resisitivity, the RLGC parameters extracted are exactly the same. This is unrealistic because the substrate losses should cause G to increase when substrate resistivity drops. Has anyone faced similar iissues?
Thanks.
