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problem about SA and SB parameter in bsim4

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perylee_sh

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STI stress effect is described by two geometric pamameters SA and SB.
The question is: post simulation results show that these two parammeter
can greatly shift the electrical performance of mos transistor, so, device
performance is impacted by layout features. How can I mimimize this in
layout design?

Compare pre-sim and post-sim result, different SA and SB can cause Isat
change greatly.

Hope you can help me.

THX
 

Hello,

Threshold voltage and mobility are affected by the well proximity effect and STI stress, their new equations include new instance parameters: SCA, SCB and SCC considering distances of devices to well edges, which can be extracted when post layout simulation, but theses effects are process dependent. tehy are related to the oxide thickness, the channeldoping profile of the devices...the only consideartion is the average distance between ur well and the active region...
Wish that's help

A+
g@fsos from Gafsa
 

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    perylee_sh

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