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Si Doping - Donor Concentration

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and a certain number of shallow donors

HI.. I am confused which equations should i use to solve this question. Pls someone tell me the equations/ steps for it/final answer/assumptions made to calculate the question.

A Si sample is doped with 10^16cm-3 boron atoms, and a certain number of shallow donors. The Fermi level is 0.36eV above Ei at 300K. What is the donor (Nd) concentration?
 

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