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Expression of Idsat in short channel MOSFET

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Kicchan

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Hi everyone,
I'm currently working with 90nm CMOS technology for digital applications. I'm trying to do some hand calculations but I'm not sure about the right equations to use. The voltage supply is pretty low (1V) and I'm considering minimum lenght devices so I'm kinda sure my mosfets are velocity saturated. On the Rabey book I found this expression:
Idsat=vsat*Cox*W*[Vgs-Vt-(Vdsat/2)]​
but checking on internet I found other books reporting different equations.
Does anyone have a precise idea about the correct version?
Thank you in advance.
 

Hi,

You can find more info about saturation current in Razavi book, but the precise equations are written in berkly bsim manual. You can search it in internet.

The saturated current equation is Id = 1/2*U*Cox*(W/L) * (Vgs -Vth)^2
 
Thank you for your reply, haykp.
Btw I'm afraid you misunderstood my question which was not referred to the saturation current reached after the condition Vds=Vgs-Vt. Actually, I was talking about the velocity saturation phenomenon of the carriers in short channel devices. I'll follow your suggestion and look on berkly bsim manual anyway.
Regards.
 

Ooops sorry :))
in that case I believe the Razavi book will not be helpful for you, please go on with berkly bsim manual.
 
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