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Recent content by vishnu438

  1. V

    Observing multiple loop points in Cadence ADE Spectre stb analysis

    for checking the intermediate gain & phase plots you can run ac analysis using 3 amp structure or using the res bias. Here you need to ensure that the loop bias is maintained properly. In 3 amp structure, 1 amp is used for bias other for load and the other will be tested
  2. V

    Why CML not CMOS for higher frequency divider?

    Re: frequency divider Can anyone suggest me a simple cml to cmos circuit
  3. V

    PSRR simulation for LDO

    you can find a very good paper by vishal mishra and rincon mora which clearly describes the procedure.
  4. V

    what happens if emitter-base & base-collector junctions are forward biased with 0.7V?

    Re: what happens if emitter-base & base-collector junctions are forward biased with 0 no if both the junctions are forward biased the BJt acts as a ON swith. if input junction is forward biased and output junction is reverse biased then the BJT will be in saturation region. when it is a on...
  5. V

    stability analysis with step response and AC loop analysis

    Break the loop at the gate of the power fet and apply the signal there and see the open loop response. but make sure that the biasing of the circuit is still maintained. Generally the stability simulation is done by modeling few components. Becoz ac analysis is generally done for unsaturated...
  6. V

    can u tell me top analog vlsi companies in india, thanx

    Aura semiconductors;;; Marvell;; Mindtree
  7. V

    Does LDOs PSRR can simulate the stability of the regulator?

    Generally psrr means the gain from the input to output divided by the gain from the supply to the output. But for an LDO the input itself is the power supply so i think it can be done.
  8. V

    how to reduce offset for the op-amp in a LDO?

    try increasing the length and width of the differntial pair and gm of the load and the diff pair has to be properly decied/
  9. V

    Transit frequency of a MOSFET

    the transit frequency gives the intrinsic (maximum) speed of the mosfet; it also means that beyond that frequency the device cant be used as a voltage amplifier;;
  10. V

    S2I(second generation) current source integrator

    have u simulated the memory cell using the s2i technique, if yes then u will not have any problem in simualting the integrator as well;; specify ur technology in which ur working.
  11. V

    [SOLVED] 180nm technology parameters

    the vdd for 180n technology is usually 1.8V.
  12. V

    can u tell me top analog vlsi companies in india, thanx

    wipro vlsi tejas network sankalp semiconductors

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