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anyone has experience with that? how was it?
my bandgap is higher than it should be on silicon (and poor PSRR) and suspect it is due to the usage of native N devices as the input pairs on the op amp. (conventional bandgap).
thanks!
there is still third order intermodulation non-linearity which is close to the input signal frequency which the low impendance path at the third order harmonic cannot get rid of..
i haven't done any crystal oscillator design. so by using the inverter to generate the 180 degree phase shift, does it mean that the crystal always generates another 180 degree phase shift? will there be 90 degree phase shift from the crystals?
analogue sleep mode cct
leakage through the gate of a big transistor?
leakage through any switches (standard cell) when they are off. try to increase the channel length or stack the devices in series.
any forward bias junction diodes?
i guess each power led has certain Vforward? it would require quite a high voltage to switch on all the leds in series.
u can adjust the brightness by controlling the current (analog) or through PWM (digital).
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