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Hi all,
I am looking for information about tsmc CR018 Breakdown voltages. The information I found on mosis is not enough. :cry:
I believe this should be mentionned in the process reference manual, but I can't find one anywhere.
Re: How to design a directional coupler with Lumped LC net w
Hi there,
Yes, that is possible, but not using LC SMD components. You will need a ferrite disk and you will have to wind 3 coils around it at 120 degree angle (see the article there is a nice picture of it...)
Depending on your...
Re: antena_human
Hi there,
What you are referring to is a measurement called SAR (Specific Absorption Rate) which is performed by mobile phone manufacturers prior to launch a new model on the market. I'm not too sure where you are located, but I can tell you that in Europe, there is an...
Re: how to verfiy that antenna is resonant and perfecty matc
Hi there,
For what kind of application is that antenna? Is it fixed or integrated in a mobile device?
You can make a quick check for your antenna when measuring the return loss with a VNA: S11 should be very sensitive when you...
Hi there,
So you want to design a power amplifier with low power consumption?
Here is the good news my friend: we all have the same problem :D
Mosieur_Oiso
Re: How to design a directional coupler with Lumped LC net w
To prevent signal reflection from antenna? Wouldn't you rather need an isolator?
Mosieur_Oiso
Hi there,
I would say it requires linear amplification because QPSK contains information in the amplitude, not only because IQ trajectory crosses zero…
GSM/EDGE standard 3pi/8-PSK modulation does not cross zero, yet it does not use saturated PA. Crossing zero sets tougher requirements on...
Hi there,
I found this web page about Russian RF connectors (with reference SR-50-164PV and SR-50-164FV):
https://qro-parts.com/images/Connector/cp50final.htm
Unfortunately, these look like N type kind of connectors, but may be these references could be a starting point to find a distributor of...
Hi there,
According to what I can see on the datasheet of the SR706 available here: http://www.polyfet.com/dsheet/SR706.pdf Zin and Zout are indicated for Vdd=28V, Idq=1200mA, and Pout=300W, isn't it what you want?
Just like vfone mentioned, the best way to measure S22 at high power is using an...
Hi there,
Why don't you simply use the Sij parameters provided in the datasheet? Measuring Sij parameters of high power transistors must be done by (or with) experienced technician. Accurate measurement of S22 requires little attenuation on Port2 of VNA. One simple mistake and you kill the Port2...
Hi there,
I believe your output power is 31.1dBm, is that correct?
I guess I=4.08mA is the collector quiescent current for stage 1 + 2. From this low value of the current one can say that this would be a class B PA.
You did not specify the PAE, which is the most important spec point of your...
Hi there,
In a Power Amplifier, to optimize the PAE, the last stage operates close to saturation for linear modulations (like UMTS/WCDMA), and in deep saturation for constant envelope modulations (like GSM/GMSK). This means that the last stage does not have much gain. So you need multistage for...
Re: GSM protocols
Hi there,
The GSM air interface is described in the ETSI specification TS 145 005
You can find it on the ETSI website https://www.etsi.org/ under "Services and Products" (you'll have to register).
Mosieur_Oiso
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