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What's your meaning of low technology (180nm, 130nm, 90nm)?
The reticle size usually is 26mm*33mm. Due to scrible-line, the maximum die size should be less than it.
For below test case (inverter), the source of PMOS/NMOS don’t connect to power/ground through metal1, just by pickup.
But, from lvs check, source side of PMOS/NMOS show AVDD/AVSS. It seems un-reasonable.
How can I check such case?
Simply to say, AOCV use different derating ocv factor for different stage. In traditional ocv, one constant derating factor is applied to whole chip. But, from statistical analysis, on-chip-variation will be counteracted with stage increasing. So, AOCV (stage based ocv) is put to reduce over-design.
I have one PMIC product, which includes several buck converters (1A~2A).
If all bucks are stressed in HTOL, the total power will be very huge for burn-in board. How can I design burn-in board for such large power?
From 180nm to 32nm, although space is smaller, k is lower and metal thickness is thinner too. So, the capacitance would be not larger.
Ex., M1 thickness 5300(180nm) vs 900(28nm); k value 3.7(180nm) vs 2.63(28nm)
Hi, Indrajit
Mismatch is from process control of fab, so it is different for different fabs.
By the way, different capacitors (MIM-cap, MOM-cap, MOS-cap, etc.) will have different mismatch performance. It is better for you to select one foundry to get the relative data.
We usually call std cell libs height as 7T, 9T, 12T (tracks). The track herein is metal1 minimum pitch (width+space).
For example,
65nm, metal1 pitch 0.2um (width/space=0.1um/0.1um). 7T cell height is 1.4um (0.2*7).
From the design rule, there is minimum clearance requirement from DNW to N+ diffusion which is outside NW. And, DNW cut N+ diffusion outside NW is not allowed.
Foundry said that "if half of N+OD with PW --> ( N+/PW ) NP diode, Half of N+OD with PW +DNW --> (N+/PW/DNW) NPN bipolar, It may has...
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