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Hi, All,
I need some rectangular copper strip/ribbon with surface plating for the terminal connection of a power semiconductor module. One example is shown in the attached pictures, where there are three copper strip/ribbon with Ni plating.
The approximate dimension is: 40 mm * 10 mm *1 mm...
Thanks a lot for your comments! I have several comments on your response.
1. You are correct. It seems that avalanche capability is only for MOSFETs. I didn't found any IGBT datasheet with avalanche specification. Does it means that IGBT nearly have no avalanche capability?
2. The permitted...
Hi, All, I am very confused on the failure test of power devices.
As well know, the short-circuit capability test of power mosfets/igbts can be used to determine and design the fault response time of a overcurrent protection circuit.
1. So how about the avalanche capability test of power...
Actually, we want to use the LTCC/HTCC based circuit board for high-temperature environments (ambient temperature > 150 oC).
I don't know the relationship between the quantity and the price, but in the initial test, I may need around 10 to 20 boards.
Another question is that can I have bare...
Hi, all,
I am trying to design a printed circuit board (a gate driver board for MOSFETs) using Low-Temperature/High-Temperature Cofired Ceramic （LTCC/HTCC）substrate, instead of the common FR4 or epoxy substrate. My questions are:
Are there any manufacturer/company who can help me do this in...
Thank you and I strongly agree with your explanation. But I am still confused.
For IGBTs, we usually set the knee point (e.g.7V) as the protection threshold. The corresponding current level at the knee point is generally larger than the maximum pulse current. So there is also should a large...
Good comments. But I think Pd(max) can only be used to estimate the maximum current and voltage through the device during the steady-state operation.
I mean, during short-circuit transient, even though the instantaneous power is higher than Pd(max), if the time duration is very short (due to the...
Very good points. But I still cannot understand your statement "Low voltage MOSFETs have Vds < 1 or even 0.5V at rated maximum pulse current".
I know the fact that the low voltage MOSFETs have very small Rds(on), e.g. several milli-Ohms, but under overcurrent condition, MOSFETs will go to the...
Hi, all, I am totally confused on the overcurrent protection for IGBTs and MOSFETs.
1. Some gate drive chips have desat function, but it seems they can only be used for IGBT, am I right?
2. According to their datasheet, the protection threshold voltage is set around 7V for IGBT, but how about...
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