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in order to prevent Psub-nwell diode forward conduct when voltage is negetive , a iso-nmos is used. now the problem is whether two nmos may oxide rupture,
the process has BDVds>12V, but Tox is 150A, so Vgs<5V to avoid oxide rupture.
but for my schematic configuration, Vgs(Vgd) some time...
For the following circuit:
if Vdd=Vdc=5V ,the current is ok
if Vdd=Vpwl(0s 0v ,1us 5V) ,then oscillate generated.
why for this ?
and how can i eliminate osc.
The start circuit i added has no effect for this .
thanks .
For wafer level testing , when the probes are less than 70um deep, all bonding pad are ok, but can't detect the value of Vref from a testing pad, if probes more deeper, Vref can detect ,but a parameter is not correct, and not varied after trimming , maybe the ic has failures, the area of test...
AS RS485 spec. Common input volatage range is (-7V,12V), How can i design my esd sturcture for signal 5V power supply.
Also for esd use, any difference between zener diode and normal nw/p+ diode?
according to rs485 spec. the receiver differential input threshold voltage is
(-200mv,200mv).and the input hysteresis is 70mv .
how to understand this and achieve it ,thanks a lot for advice.
A schematic of Error AMP is show below:
One input is connected to feedback voltage ,the other is voltage reference.when V_FB risen, VC is logic '1',so that M1 is on.
who can tell me why the input needed to connect two depletion mosfet and a capacitor like that ,also what's the use of C3...
look at the circuit above,it's a voltage reference circuit. in my opinion, Vref=Vgsmn1×(R1+R2)/R2,and Vgs=Vth+........ Vth has negative TC and Id has positive TC .
i don't know whether i think is right. and how to analysis it's frequency responce.
In Razavi's book<Design of Analog CMOS Intergrated Circuits>.The problem of 9.24 shows a opamp with two pair of input stage,a fast path in parallel wiht a slow path. What's the characteristics of this circuits? and Show me some papers about it ?
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