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Good question.
There is a tool named TRADICA developped by the University of Dresden which answer partially your question. This is in fact dedicated to bipolar transistors using Hicum physics based scalable model.
You enter the PCM data, some design layout aprameters, some known process...
The advantages of CMOS is well known for low frequency. < 1G
The advantages of SiGe BiCMOS is well known at high frequency. > 10G to 200GHz
III-V for higher than 100 GHz.
Between these it depends on the process performances and cost.
for example for Bluethooth application RFCMOS is a good...
Dear Puppet1
The frequency (ft) you can achive with RFCMOS technology = ft of SiGe BiCMOS of 1-2 older generation.
consequence: price is much lower for SiGe.
Other things to be taken into account:
Noise, reliability performances, breakdown voltages, ...
Even today, for very fhigh frequency...
iccap tutorial site:edaboard.com
**broken link removed**
you can also contact directly Dr.Gneiting from ADMOS (www.admos.com)
Or
try the agilent EESOF site http://eesof.tm.agilent.com/partners/admos.html
Regards,
Dini
BiCMOS: yes Bipolar + CMOS and for RF applications mainly "SiGe" bipolar + CMOS
RFCMOS: CMOS + additional process step to avoid Hot carrier injections (reliability issues) + several metalization steps for inductors.
please refer to these article :
**broken link removed**...
Re: SiGe Process VS CMOS
In terms of Ft:
what you achieve with SiGe in a given technology node, you achieve it with 1 to 2 genetation later with RFCMOS.
Remind that RFCMOS is not a pure CMOS technology. It requires several metal layers (6-7) for inductors and special process steps/ and design...
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