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Recent content by dgy99

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    Do you need to do post layout simulation for analog IC?

    Re: Post Layout Simulation You must do it!! Generally, parasitic component of Metal line (ex. Cap. Resistor) is not defined in a library. In analog circuit, the parasitic make additional capacitor, resistor (influence bandwidth and bias, crosstalk...). The post simulation result might be...
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    How to save node voltage value chosen by me in HSPICE?

    hspice option Hey guys.. I want to know how to save node voltage value which only I need. Although I don't need voltage value of almost nodes, HSPICE save voltage value of all node. So silmulation is loose.. I think, if it is possible, simulation will be done more quickly. Do you have...
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    Where to use CS, CG, CD single stage amplifiers?

    Re: single stage amplifier I think they are used to make something like OPAMP, BIAS Circuit, Differential AMP... not to be used by themselves, usually. For example, Beta multiplier is consist of CS with Source degeneration.. And Diferential Amp has 2 CS amps. cascode amp has CS and CG...
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    simple layout question

    in the case of CMOS with p-substrate, the bulk of NMOS is the substrate, it's always connected to gnd, and the bulk of PMOS is nwell surrounding PMOS.
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    How to calculate resistance with respect to long connection lines? (Cadence)

    Re: layout R = (sheet resistance) * (number of squares) but at a corner, resistance is a little different. I guess ur design rule document, from foundry, mention about sheet resistance of each metal layer. good luck..
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    starting layout design using cadence

    Before starting Layout, you have to check Design Rule form your foundry.
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    Should I get 10 or 100uA from bias circuit to mirror it to 50uA current sources?

    Re: 10 or 100 You can use 10uA source and than use five times large current mirror transistor. You will get 50uA. It can be a little different because of some side effects.
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    Broadband, Low-Power ADC for RF applications

    I have read a paper about TIQ ADC which have about 4GHz sampling rate with 65nm CMOS process.

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