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deep saturation transistor
As Vds increases to be equal to Vgs-Vt, the inversion layer density at the drain end of the channel becomes zero and channel becomes pinch off. As Vds increases above Vgs-Vt the length of pinch off region increases and while that of inversion layer decreases (You...
equal pullup and pulldown
If transistors are in series, the effective Vds seen by each transistor will be less and hence they will have less velocity saturation and hence more current and hence resistance decreases.
equal rise and fall time
Considering the Nand4 gate:
1) The pull up time will be data dependent, i.e. you have to see how many PMOS are ON at a time. Worst case will be 0111 and best will be 0000
2) For pull down time, due to velocity saturation, the effective resistance of the Four series...
Inverter can be a level shifter if you are going from High voltage domain to low voltage domain. But will not work for low to high accurately even with skewing. For low to high level converter refer Weste Harris: CMOS VLSI design
In both body effect and DIBL, the width of deplition region increases, but in Body effect the threshold voltage increases while in DIBL Vth decreases, Why???
Can anyone tell me the sizes i.e. width and length of PMOS and NMOS in terms of λ, which are used in a typical flip-flop and transmission gate.
Thanks in advance
how to improve cmrr
For improving the CMRR of the differential Amplifier using opamp, u need to match all the ressistors in the differential Amplifier to around 0.1%, becauuse 10% mismatch in resistors causes 1/5th of common mode voltage to be appeared as differential voltage, which will be...
what is proteus vsm
Proteus VSM is a very good tool in designing with Microcontrollers. Along with attching all components with 8051 and other microcontrollers, you can load ur code on 8051 in simulation. Without hardware you can test ur code.
Besides this all simulation of normal...
Hi santanu,
You need to include a low Vt model file in T-spice along with your normal model file.
Now when assigning names such as
M1 d g s b PMOS W=1u L=0.12u in normal transisters. Put name given in Low Vt model file such as lvt_PMOS in place of PMOS.
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