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Recent content by ams_ei

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    Regarding Ultrasim and MMSIM

    Hi, Can anyone please tell me why Ultrasim is called MMSIM? Thank you. Kind regards
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    Issue with Expression plot in ADE calculator

    Hi, I am trying to plot a digital signal using calculator after transient analysis. I am able to get the faithful result at individual output. However, while trying to calculate an expression (4 * VT("/oB<2>")), and simulate it, I am not getting the value 4. Instead I am getting 20V on Y-Axis...
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    Regarding conservative and non-conservative systems in Verilog-A/MS

    Could you please explain me why it is a conservative system? - - - Updated - - - Is it because the signals are electrical in nature?
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    Regarding conservative and non-conservative systems in Verilog-A/MS

    Hi, I am a new with verilog-AMS. I've developed a behavioral model of a lowpass filter. `include “disciplines.vams” `include “constants.vams” module lp_filt_beh (sig1, sig2, gnd); inout sig1, sig2, gnd; electrical sig1, sig2, gnd; parameter real res = 1K; parameter real cap = 1u; analog...
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    Basic doubt on AMS-designer and co-simulation

    Hi, I'm new with AMS designer. I've few basic questions: 1. Could anyone please explain me the differences between co-simulation and AMSDesigner-with ultrasim simulation (AMS-Ultra)? 2. Does ultrasim support simulating RTL verilog codes? 3. How the Mixed Signal circuit gets simulated with AMS...
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    Pinch off operation of MOSFET and electrons flow

    Hi, I have understood that if the Vds of an NMOS is greater than overdrive voltage, the NMOS channel will be pinched off. If we increase the value of Vds, the channel will be more pinched off towards source and hence, the effective channel length will be reduced. My question is: If the channel...
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    sub-threshold region of operation of MOSFET

    Hi, Could anyone please explain me what sub-threshold region of operation of a MOSFET and what are the conditions to be satisfied to operate a MOSFET in sub-threshold region. Thank you.
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    Reference current generator circuit for current mirror

    Hi, In the above schematic attached, I have calculated rin and Iref and both the parameters are the same for fig (a). and fig (b). rin = R + I/gm and Iref = (Vdd - Vth)/ R. Could you please clarify me, which way of connecting the circuit is correct and why? Thank you. Kind regards.
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    MOSFET Resistance rout and Rds (ON)

    Hi, I have checked with TSMC180nm process technology file (rf018.scs). Nowhere, I have found a device parameter called rds. Could you please guide me where where can I get the value of rds(on) for nmos2v cell of 180nm technology? Thank you. With regards.
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    MOSFET Resistance rout and Rds (ON)

    Hi, Thank you for your reply. Does Rds(ON) depends on device geometry? Could you please explain me? Regards.
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    The application of Current source and current sink current mirror

    Hi, I have read the article on current mirror and understood that current mirror using PMOS can be used as current source and current mirror using NMOS can be used as a current sink. I am not sure, where can I use current sink current mirror and where current source current mirror in the...
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    Drain Current of Depletion Type MOSFET in two different regions

    Hi, Thanks for your reply. In depletion-enhancement type MOSFET, the same device could be used as a depletion mode and/or enhancement mode. How can it be possible that the same equations could be true for both the modes? Thank you. Kind regards. - - - Updated - - - PMOS enhancement type...
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    MOSFET Resistance rout and Rds (ON)

    Hi, Would you be kind to answer my following question? Is Rds(ON) and rout [=1/(lambda*Id)] the same of any MOSFET? Thank you.
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    Drain Current of Depletion Type MOSFET in two different regions

    Hi, I have a few doubts about depletion type MOSFET: 1. The schematic symbol of Depletion type MOSFET and Deletion-Enhancement type MOSFET are the same. Therefore, if any one of them is used in a circuit schematic, how can we distinguish them? 2. For Enhancement type MOSFET, the...

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