There are both kinds of Hall effect sensors - one kind has electrons that are attracted to a magnet and the other where holes are attracted by the magnet (different poles). The mechanism is the same as what happens to a MOSFET device.
There are both kinds of Hall effect sensors - one kind has electrons that are attracted to a magnet and the other where holes are attracted by the magnet (different poles). The mechanism is the same as what happens to a MOSFET device.
In a MOSFET, the gate is electrically isolated from the channel. An electric field attracts the electrons and varies the channel's characteristics. A magnet performs the same task in a Hall effect device.
In a MOSFET, the gate is electrically isolated from the channel. An electric field attracts the electrons and varies the channel's characteristics. A magnet performs the same task in a Hall effect device.
Your theory is wrong. Electrons are not attracted or repulsed by magnetic fields, instead moving charge carriers are deflected in magnetic fields, orthogonal to field and speed vector. https://en.wikipedia.org/wiki/Hall_effect
A static electron is not affected by a magnetic field (wrong to call south pole of a magnet). A moving electron is equivalent to a current and a current is associated with a magnetic field and this magnetic field interacts with an external magnetic field.
A static or moving electron is affected by an external electric field- the force is in the direction of the field (do not forget about the negative charge) because an electron is always associated with an electric field that interacts with the external electric field.
For a moving electron (the current is in the same direction as the motion- again do not forget about the negative charge) the force, the magnetic field and the velocity are all mutually perpendicular. (left and right hand rules).