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Why NMOS has snapback properties

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bicave

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nmos + snapback

I wonder how NMOS can have snapback,
ESD so complicated! I don;t know its behavior. Do you have any material illustrate it more clear.

Thanks
 

snapback nmos

NMOS transistor has parastic BJT npn. During snapback, this BJT transistor that conducting the current. So, the snapback current is actually a parasitic BJT current
 

nmos snapback

Is this BJT current is triggered by high electric field near the drain junction? which is so called J-E heating?
 

Some explanations:
Due to high electric field at NMOS drain, electron-hole pairs are generated as a result of avalanche break-down, then parasitic BJT is triggered when source-substrate junction is forward-biased.

I assume you are referring to joule-heating by "J-E heating": the power consumed by Rsub of parasitic BJT.

Hope it helps.

Regards,
Jordan
 

It perhaps before snapback only BVds affect; while P-sub current cause parastics NPN BE junction conduct, parastics NPN affect. Vce is smaller than BVds.
 

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