Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

why ggNMOS used for ESD doesn't break down under stress ?

Status
Not open for further replies.

ajay181

Newbie level 6
Joined
Feb 25, 2009
Messages
13
Helped
0
Reputation
0
Reaction score
0
Trophy points
1,281
Location
Bangalore, India
Activity points
1,360
Hi all,

Can anyone explain why ggNMOS used for ESD doesn't break down under stress , eventhough gate is shorted to gnd ?
 

Since ggnmos is connected to ground, it is "off" in the normal mode of operation. But during esd event on drain side (to the net it is protecting) the parasitic BJT in the nmos (source - substrate - drain -> npn) triggers on and will discharge all the current through it. But we should make sure that BJT should not go to secondary breakdown otherwise device will be permanantly damaged.
-Dinesh
 

as Dinesh said, ggnmos as parasitic BJT does breakdwon under certain stress.
 

Everything breaks down. Although you might not see it
as long as you stay inside the box. You might like to
know, how thick the cardboard is. Given that what's
outside is not very friendly.
 

Status
Not open for further replies.

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top