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The transconductance of bipolar transistor is Gm=Ic/VT=Ic/26mv, VT is thermal voltage.
The transconductance of MOS transistor is Gm=2Id/(Vgs-Vt)=2Id/100mv, assumed (Vgs-Vt)min=100mv when the nmos transistor is in the saturation region.
From the above two equation, it can be seen "when the Ic=Id=1mA, the Gm(bioplar)=0.038A/V and the Gm(NMOS)=0.02A/V", so the bipolar has higher Gm than CMOS.
Let me start with the difinition of transconductance, the variation of the output current with respect to the input voltage.
CMOS conducts the current through its majority carriers and thus is quite sensitive to the input voltage. In the mean time, BJTs conduct the electricity using both electrons and holes. So if the input voltage changes, first some of the moved charges should return back to their previous position and it's only then that we will see the effect of the input change.
All conductors with this property exhibit the behaviour. As an example thyristors also have this intrinsic property. (The time needed for the carriers to return back to the appropriate position is called holding time)